Design And Simulation Of Power Amplifier At 10 Ghz For X-Band Radar Applications
This paper reviews a design and simulation of X-band GaAs pHEMT power amplifier. The energy that is emitted through link module at RF amplifier is more as RF amplifier is located at the end of radio transmitter which supplied RF power for the receiving antenna. Ideal power amplifier converts DC p...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2017
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| Online Access: | http://eprints.usm.my/52939/ http://eprints.usm.my/52939/1/Design%20And%20Simulation%20Of%20Power%20Amplifier%20At%2010%20Ghz%20For%20X-Band%20Radar%20Applications_Nur%20Syahirah%20Abdul%20Raif_E3_2017.pdf |
| Summary: | This paper reviews a design and simulation of X-band GaAs pHEMT power
amplifier. The energy that is emitted through link module at RF amplifier is more as RF
amplifier is located at the end of radio transmitter which supplied RF power for the
receiving antenna. Ideal power amplifier converts DC power into output signal power under
the linear control of an RF input from signal generator. Power amplifier concept requires
non-linear operation since linear networks cannot shift power from one frequency to
another. The frequency range for X-band is between 8 to 12 GHz. RF amplifier design
depends on the terminal characteristics of the transistor as represented by S-parameter.
Scattering parameter (S-parameter) of the transistor provides the significant values to
perform analysis such as stability, DC biasing, input return loss ( |
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