A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon

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A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon

The goal to achieve low microwave attenuation loss in a high-speed wireless communication system is crucial for the advancement of technology evolution. Background carrier and parasitic surface conduction hinder the progression of a wireless system to perform better. Recently, a new method using...

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Bibliographic Details
Main Author:	Tan, Jia Yiing
Format:	Monograph
Language:	English
Published:	Universiti Sains Malaysia 2017
Subjects:	T Technology TK1-9971 Electrical engineering. Electronics. Nuclear engineering
Online Access:	http://eprints.usm.my/52870/ http://eprints.usm.my/52870/1/A%20Study%20Of%20Capacitance-Voltage%20Characteristics%20For%20Metal-Oxidesemiconductor%20Structure%20On%20Goldcompensated%20High%20Resistivity%20Silicon_Tan%20Jia%20Yiing_E3_2017.pdf

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