A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon
The goal to achieve low microwave attenuation loss in a high-speed wireless communication system is crucial for the advancement of technology evolution. Background carrier and parasitic surface conduction hinder the progression of a wireless system to perform better. Recently, a new method using...
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| Format: | Monograph |
| Language: | English |
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Universiti Sains Malaysia
2017
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| Online Access: | http://eprints.usm.my/52870/ http://eprints.usm.my/52870/1/A%20Study%20Of%20Capacitance-Voltage%20Characteristics%20For%20Metal-Oxidesemiconductor%20Structure%20On%20Goldcompensated%20High%20Resistivity%20Silicon_Tan%20Jia%20Yiing_E3_2017.pdf |
| _version_ | 1848882368110133248 |
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| author | Tan, Jia Yiing |
| author_facet | Tan, Jia Yiing |
| author_sort | Tan, Jia Yiing |
| building | USM Institutional Repository |
| collection | Online Access |
| description | The goal to achieve low microwave attenuation loss in a high-speed wireless
communication system is crucial for the advancement of technology evolution.
Background carrier and parasitic surface conduction hinder the progression of a wireless
system to perform better. Recently, a new method using deep-level doping compensation
with the gold element to create high resistivity silicon substrate for microwave application
is successful. Currently, there is no existing equivalent circuit model and mathematical
equations to classify capacitance-voltage characteristic for a metal-oxide structure on
gold-compensated high resistivity silicon substrate. An investigation of capacitancevoltage
characteristics for the metal-oxide-semiconductor structure on low resistivity,
high resistivity and gold-compensated silicon substrates are carried out. The suitable
mathematical equations to represent capacitance-voltage curves of low resistivity silicon
is evaluated. High resistivity silicon equivalent circuit models for low and high
frequencies are determined in MATLAB and verified in SILVACO. The equivalent
circuit models and equations of high resistivity silicon are determined successfully.
Experimental data of Au-compensated high resistivity silicon is compared and analysed
with theoretical high resistivity silicon data. Based on the comparison result of both C-V
curves, the equivalent circuit of gold-compensated high resistivity silicon is not same as
the high resistivity silicon. |
| first_indexed | 2025-11-15T18:33:48Z |
| format | Monograph |
| id | usm-52870 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:33:48Z |
| publishDate | 2017 |
| publisher | Universiti Sains Malaysia |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-528702022-06-14T03:31:45Z http://eprints.usm.my/52870/ A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon Tan, Jia Yiing T Technology TK1-9971 Electrical engineering. Electronics. Nuclear engineering The goal to achieve low microwave attenuation loss in a high-speed wireless communication system is crucial for the advancement of technology evolution. Background carrier and parasitic surface conduction hinder the progression of a wireless system to perform better. Recently, a new method using deep-level doping compensation with the gold element to create high resistivity silicon substrate for microwave application is successful. Currently, there is no existing equivalent circuit model and mathematical equations to classify capacitance-voltage characteristic for a metal-oxide structure on gold-compensated high resistivity silicon substrate. An investigation of capacitancevoltage characteristics for the metal-oxide-semiconductor structure on low resistivity, high resistivity and gold-compensated silicon substrates are carried out. The suitable mathematical equations to represent capacitance-voltage curves of low resistivity silicon is evaluated. High resistivity silicon equivalent circuit models for low and high frequencies are determined in MATLAB and verified in SILVACO. The equivalent circuit models and equations of high resistivity silicon are determined successfully. Experimental data of Au-compensated high resistivity silicon is compared and analysed with theoretical high resistivity silicon data. Based on the comparison result of both C-V curves, the equivalent circuit of gold-compensated high resistivity silicon is not same as the high resistivity silicon. Universiti Sains Malaysia 2017-06-01 Monograph NonPeerReviewed application/pdf en http://eprints.usm.my/52870/1/A%20Study%20Of%20Capacitance-Voltage%20Characteristics%20For%20Metal-Oxidesemiconductor%20Structure%20On%20Goldcompensated%20High%20Resistivity%20Silicon_Tan%20Jia%20Yiing_E3_2017.pdf Tan, Jia Yiing (2017) A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon. Project Report. Universiti Sains Malaysia, Pusat Pengajian Kejuruteraan Elektrik & Elektronik. (Submitted) |
| spellingShingle | T Technology TK1-9971 Electrical engineering. Electronics. Nuclear engineering Tan, Jia Yiing A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title | A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title_full | A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title_fullStr | A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title_full_unstemmed | A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title_short | A Study Of Capacitance-Voltage Characteristics For Metal-Oxidesemiconductor Structure On Goldcompensated High Resistivity Silicon |
| title_sort | study of capacitance-voltage characteristics for metal-oxidesemiconductor structure on goldcompensated high resistivity silicon |
| topic | T Technology TK1-9971 Electrical engineering. Electronics. Nuclear engineering |
| url | http://eprints.usm.my/52870/ http://eprints.usm.my/52870/1/A%20Study%20Of%20Capacitance-Voltage%20Characteristics%20For%20Metal-Oxidesemiconductor%20Structure%20On%20Goldcompensated%20High%20Resistivity%20Silicon_Tan%20Jia%20Yiing_E3_2017.pdf |