Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_ Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan

Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_ Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan_Investigation Of Ni-Cu As Ohmic Contact On P-Type Gan

Nowadays, wide band gap semiconductors like Gallium Nitride (GaN) are considered the most promising materials for the next generation of power electronic devices. The properties of GaN like wide band gap, high critical electric field and high thermal conductivity give the possibility to fabricate de...

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Bibliographic Details
Main Author: Koe, Mei Yen
Format: Monograph
Language:English
Published: Universiti Sains Malaysia 2017
Subjects:
T Technology
TA401-492 Materials of engineering and construction. Mechanics of materials
Online Access:http://eprints.usm.my/52530/
http://eprints.usm.my/52530/1/Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_%20Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_Investigation%20Of%20Ni-Cu%20As%20Ohmic%20Contact%20On%20P-Type%20Gan_Koe%20Mei%20Yen_B1_2017.pdf

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