Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes

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Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes

InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optic...

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Bibliographic Details
Main Authors:	Asri, R. I. M, Hamzah, N. A, Ahmad, M. A., Alias, E. A., Sahar, M. M., Abdullah, M.
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/49101/ http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf

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