Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optic...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Online Access: | http://eprints.usm.my/49101/ http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf |
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| author | Asri, R. I. M Hamzah, N. A Ahmad, M. A. Alias, E. A. Sahar, M. M. Abdullah, M. |
| author_facet | Asri, R. I. M Hamzah, N. A Ahmad, M. A. Alias, E. A. Sahar, M. M. Abdullah, M. |
| author_sort | Asri, R. I. M |
| building | USM Institutional Repository |
| collection | Online Access |
| description | InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to
1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis,
decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence
(PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices. |
| first_indexed | 2025-11-15T18:17:32Z |
| format | Conference or Workshop Item |
| id | usm-49101 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:17:32Z |
| publishDate | 2020 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-491012021-05-04T08:52:20Z http://eprints.usm.my/49101/ Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes Asri, R. I. M Hamzah, N. A Ahmad, M. A. Alias, E. A. Sahar, M. M. Abdullah, M. QC1-999 Physics InGaN/GaN blue light-emitting diodes (LEDs) have been successfully growth via metal organic chemical vapor deposition (MOCVD) in temperature range 920 to 1020 °C growth temperatures for p-GaN layer. The significant of p-GaN growth temperature are studied in detail according to the electrical, optical, and structural performances of InGaN/GaN multiple-quantum-well (MQW) blue LEDs. From experimental analysis, decrement growth temperature of p-GaN layer shows improvement trends in term of output power values and turn on voltage values. The optical and structural properties of InGaN/GaN MQW blue LEDs structure were enhanced based on the decrement of photoluminescence (PL) intensity with increasing growth temperature of the p-GaN layer. This study yields an optimized p-GaN layer growth temperature for understanding highly efficient InGaN/GaN blue LED devices. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf Asri, R. I. M and Hamzah, N. A and Ahmad, M. A. and Alias, E. A. and Sahar, M. M. and Abdullah, M. (2020) Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
| spellingShingle | QC1-999 Physics Asri, R. I. M Hamzah, N. A Ahmad, M. A. Alias, E. A. Sahar, M. M. Abdullah, M. Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_full | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_fullStr | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_full_unstemmed | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_short | Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes |
| title_sort | influence of growth temperature of pgan layer on the characteristics of ingan/gan blue light emitting diodes |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/49101/ http://eprints.usm.my/49101/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2082.pdf |