Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method
In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2020
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| Online Access: | http://eprints.usm.my/49090/ http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf |
| _version_ | 1848881340999532544 |
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| author | Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah |
| author_facet | Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah |
| author_sort | Hamid, Maizatul Akmam Ab |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p-
Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The
root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth
conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector
applications. |
| first_indexed | 2025-11-15T18:17:28Z |
| format | Conference or Workshop Item |
| id | usm-49090 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:17:28Z |
| publishDate | 2020 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-490902021-05-04T03:41:21Z http://eprints.usm.my/49090/ Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics In this paper, the effects of different annealing growth conditions on the structural, surface morphology and optical properties of the grown β-Ga2O3 thin films on p- Si(100) substrates via sol-gel dip coating were reported. Field-emission scanning electron microscopy observations shows uniform and densely packed grains as well as decreasing pinholes are formed at annealing temperatures of 900⁰C. As the annealing temperatures increase from 700⁰C to 1200⁰C, the crystallinity of the β-Ga2O3 (400) peak at 900⁰C shows improved quality as well as increases crystallite size, D and decreasing FWHM value. The root-mean-square (rms) surface roughness of the deposited β-Ga2O3 thin films increases from 0.479 nm to 91.0 nm when annealing temperature increased from 700⁰C to 1200⁰C and exhibits nanocrystalline structure at 900⁰C. FTIR measurements demonstrated that the reflectivity spectra of β-Ga2O3 thin films increases from 700⁰C and diminishes above 1000⁰C. Finally, all the results revealed that 900⁰C in air ambient was the best annealing growth conditions to deposit β-Ga2O3 thin film and have high potential for deep UV photodetector applications. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf Hamid, Maizatul Akmam Ab and Ng, Sha Shiong and Hassan, Zainuriah (2020) Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
| spellingShingle | QC1-999 Physics Hamid, Maizatul Akmam Ab Ng, Sha Shiong Hassan, Zainuriah Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title | Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title_full | Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title_fullStr | Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title_full_unstemmed | Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title_short | Effects Of Annealing Growth Conditions Of β-Ga2O3 Thin Films For Solar Blind UV Photodetectors By Using Sol-Gel Dip Coating Method |
| title_sort | effects of annealing growth conditions of β-ga2o3 thin films for solar blind uv photodetectors by using sol-gel dip coating method |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/49090/ http://eprints.usm.my/49090/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2072.pdf |