Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film
In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The s...
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| Format: | Conference or Workshop Item |
| Language: | English |
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2020
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| Online Access: | http://eprints.usm.my/49088/ http://eprints.usm.my/49088/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2071.pdf |
| _version_ | 1848881340251897856 |
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| author | Hedei, Puteri Haslinda Megat Abdul Hassan, Zainuriah Hock, Jin Quah |
| author_facet | Hedei, Puteri Haslinda Megat Abdul Hassan, Zainuriah Hock, Jin Quah |
| author_sort | Hedei, Puteri Haslinda Megat Abdul |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were
subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The structural properties of post-deposition annealed Ga2O3 thin films were characterized using grazing incidence X-ray diffraction (GIXRD).
Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) were employed to attain the three-dimensional surface topographies and morphologies,
respectively, for the investigated Ga2O3 thin films. In additional, elemental composition of these thin films were characterized using energy-dispersive X-ray spectroscopy and thickness of the investigated Ga2O3 thin films were estimated based on the cross-sectional FESEM
images. Current-voltage characteristics of the Ga2O3 thin films subjected to different postdepositional annealing temperatures were also presented in this work. |
| first_indexed | 2025-11-15T18:17:28Z |
| format | Conference or Workshop Item |
| id | usm-49088 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:17:28Z |
| publishDate | 2020 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-490882021-05-04T03:09:05Z http://eprints.usm.my/49088/ Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film Hedei, Puteri Haslinda Megat Abdul Hassan, Zainuriah Hock, Jin Quah QC1-999 Physics In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The structural properties of post-deposition annealed Ga2O3 thin films were characterized using grazing incidence X-ray diffraction (GIXRD). Atomic force microscopy (AFM) and field emission scanning electron microscopy (FESEM) were employed to attain the three-dimensional surface topographies and morphologies, respectively, for the investigated Ga2O3 thin films. In additional, elemental composition of these thin films were characterized using energy-dispersive X-ray spectroscopy and thickness of the investigated Ga2O3 thin films were estimated based on the cross-sectional FESEM images. Current-voltage characteristics of the Ga2O3 thin films subjected to different postdepositional annealing temperatures were also presented in this work. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49088/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2071.pdf Hedei, Puteri Haslinda Megat Abdul and Hassan, Zainuriah and Hock, Jin Quah (2020) Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020. |
| spellingShingle | QC1-999 Physics Hedei, Puteri Haslinda Megat Abdul Hassan, Zainuriah Hock, Jin Quah Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title | Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title_full | Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title_fullStr | Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title_full_unstemmed | Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title_short | Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film |
| title_sort | effects of post-deposition annealing in oxygen ambient of rf magnetron sputtered ga2o3 thin film |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/49088/ http://eprints.usm.my/49088/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2071.pdf |