Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted
Electrochemical Etching Technique

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Influence Of Etching Time On The Porous P-Type Gallium Nitride Using Alternating Current Photo-Assisted Electrochemical Etching Technique

The Theoretical And Experimental Study Of Porous P-Type Gallium Nitride (Gan) Is Discussed In This Work. Porous P-Type Gan Was Adequately Fabricated Using Alternating Current Photo-Assisted Electrochemical Etching Technique With Various Etching Times (10, 20, 30, And 60 Minutes) In Mixed Hydrofluori...

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Bibliographic Details
Main Authors:	Sohimee, Siti Nurfarhana, Hassan, Zainuriah, Ahmed, Naser M., Radzali, Rosfariza, Way, Foong Lim
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/49067/ http://eprints.usm.my/49067/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2061.pdf

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