Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer

This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that s...

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Main Authors: Yusuf, Yusnizam, Wee, Kie Tang, Taib, Muhamad Ikram Md, Zainal, Norzaini
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
Online Access:http://eprints.usm.my/49066/
http://eprints.usm.my/49066/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2060.pdf
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author Yusuf, Yusnizam
Wee, Kie Tang
Taib, Muhamad Ikram Md
Zainal, Norzaini
author_facet Yusuf, Yusnizam
Wee, Kie Tang
Taib, Muhamad Ikram Md
Zainal, Norzaini
author_sort Yusuf, Yusnizam
building USM Institutional Repository
collection Online Access
description This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that some of the Ga atoms were eliminated for 10 minutes of etching, resulting in co-existance of AlGaN material with higher Al content. Similar behaviour was also witnessed in the case for 10 mol/L of KOH with 5 and 10 minutes of etching. Nonetheless, well-defined hexagonal patterns were only formed when the etching was conducted using 10 mol/L of KOH for 10 minutes. Such patterns have the potential to increase light extraction efficiency of UV LEDs.
first_indexed 2025-11-15T18:17:21Z
format Conference or Workshop Item
id usm-49066
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:17:21Z
publishDate 2020
recordtype eprints
repository_type Digital Repository
spelling usm-490662021-04-30T02:12:07Z http://eprints.usm.my/49066/ Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer Yusuf, Yusnizam Wee, Kie Tang Taib, Muhamad Ikram Md Zainal, Norzaini QC1-999 Physics This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that some of the Ga atoms were eliminated for 10 minutes of etching, resulting in co-existance of AlGaN material with higher Al content. Similar behaviour was also witnessed in the case for 10 mol/L of KOH with 5 and 10 minutes of etching. Nonetheless, well-defined hexagonal patterns were only formed when the etching was conducted using 10 mol/L of KOH for 10 minutes. Such patterns have the potential to increase light extraction efficiency of UV LEDs. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49066/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2060.pdf Yusuf, Yusnizam and Wee, Kie Tang and Taib, Muhamad Ikram Md and Zainal, Norzaini (2020) Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer. In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020), 1-2 December 2020.
spellingShingle QC1-999 Physics
Yusuf, Yusnizam
Wee, Kie Tang
Taib, Muhamad Ikram Md
Zainal, Norzaini
Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title_full Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title_fullStr Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title_full_unstemmed Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title_short Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
title_sort influence of molarity and time of potassium hydroxide etching on al-rich algan layer
topic QC1-999 Physics
url http://eprints.usm.my/49066/
http://eprints.usm.my/49066/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2060.pdf