Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5 mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that s...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/49066/ http://eprints.usm.my/49066/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2060.pdf |
| Summary: | This work will describe the influence of molarity and time of potassium hydroxide etching on Al-rich AlGaN layer. With potassium hydroxide (KOH) molarity of 5
mol/L, no significant change on the pores formation was observed for 5 and 10 minutes of etching. Nonetheless, there was a possibilty that some of the Ga atoms were eliminated for 10 minutes of etching, resulting in co-existance of AlGaN material with higher Al content.
Similar behaviour was also witnessed in the case for 10 mol/L of KOH with 5 and 10 minutes of etching. Nonetheless, well-defined hexagonal patterns were only formed when the etching was conducted using 10 mol/L of KOH for 10 minutes. Such patterns have the potential to
increase light extraction efficiency of UV LEDs. |
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