APA (7th ed.) Citation

Yusof, A. S., Hassan, Z., Hamady, S., Ng, S. S., Ahmad, M. A., Way, F. L., . . . Chevallier, C. (2020). The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures.

Chicago Style (17th ed.) Citation

Yusof, Ahmad Sauffi, Zainuriah Hassan, Sidi Hamady, Sha Shiong Ng, Mohd Anas Ahmad, Foong Lim Way, Nicolas Fressengeas, and Christyves Chevallier. The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures. 2020.

MLA (9th ed.) Citation

Yusof, Ahmad Sauffi, et al. The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures. 2020.