Effect Of Nucleation Time On GaN Layer
Grown On Different Shape Of Patterned Sapphire Substrate

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Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate

This work describes the effect of nucleation time on GaN layer; which was grown separately on three different shape of patterned sapphire substrate (PSS); cone PSS and dome PSS. Prior to the GaN layer growth, a low temperature of GaN nucleation layer was initially grown at 40, 80 and 160 second. Th...

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Bibliographic Details
Main Authors:	Taib, Muhamad Ikram Md, Zaini, Siti Nurul Waheeda Mohmad, Zainal, Norzaini
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/49045/ http://eprints.usm.my/49045/1/ABSTRACT%20BOOK%20MNRG%202020.pdf%20cut%2050.pdf

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