Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique
Alternating current (sine-wave a.c (50Hz)) photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultraviolet (UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of poro...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/49004/ http://eprints.usm.my/49004/1/ZH_16.pdf%20cut.pdf |
| _version_ | 1848881317641453568 |
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| author | Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Fong Quah, Hock Jin |
| author_facet | Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Fong Quah, Hock Jin |
| author_sort | Sohimee, Siti Nurfarhana |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Alternating current (sine-wave a.c (50Hz)) photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultraviolet (UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with a ratio (5:20) for 30 minutes under different UV lamp intensity; 10%, 30% and 60%. The samples were characterized by using atomic force microscopy (AFM) and X-ray diffraction (XRD). The AFM measurements revealed porous silicon with 30% of UV light intensity has the highest surface roughness value with a pyramidal shape. XRD analysis showed FWHM value of etched samples increased as the crystallite size of the etched sample decreased. |
| first_indexed | 2025-11-15T18:17:06Z |
| format | Conference or Workshop Item |
| id | usm-49004 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:17:06Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-490042021-04-23T01:47:10Z http://eprints.usm.my/49004/ Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Fong Quah, Hock Jin QC1-999 Physics Alternating current (sine-wave a.c (50Hz)) photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultraviolet (UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with a ratio (5:20) for 30 minutes under different UV lamp intensity; 10%, 30% and 60%. The samples were characterized by using atomic force microscopy (AFM) and X-ray diffraction (XRD). The AFM measurements revealed porous silicon with 30% of UV light intensity has the highest surface roughness value with a pyramidal shape. XRD analysis showed FWHM value of etched samples increased as the crystallite size of the etched sample decreased. 2017 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/49004/1/ZH_16.pdf%20cut.pdf Sohimee, Siti Nurfarhana and Hassan, Zainuriah and Ahmed, Naser Mahmoud and Lim, Way Fong and Quah, Hock Jin (2017) Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique. In: The International Conference of Solid State Science and Technology (ICSSST 2017). |
| spellingShingle | QC1-999 Physics Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Fong Quah, Hock Jin Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title_full | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title_fullStr | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title_full_unstemmed | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title_short | Effect of Different UV Light Intensity On Porous Silicon Fabricated by Using Alternating Current Photo-Assisted Electrochemical Etching (ACPEC) Technique |
| title_sort | effect of different uv light intensity on porous silicon fabricated by using alternating current photo-assisted electrochemical etching (acpec) technique |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/49004/ http://eprints.usm.my/49004/1/ZH_16.pdf%20cut.pdf |