The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

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The Role Of Growth Temperature On The Indium Incorporation Process For Mocvd Growth Of InGaN/GaN Heterostructures

This work presents the effect of growth temperature on the evolution of indium incorporation and growth process of InGaN/GaN heterostructures grown using Taiyo Nippon Sanso Corporation (TNSC) metal organic chemical vapor deposition (MOCVD) SR4000-HT system. The InGaN/GaN heterostructures were epitax...

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Bibliographic Details
Main Authors:	Yusof, Ahmad Sauffi, Hassan, Zainuriah, Hamady, Sidi, Sha, Shiong Ng, Ahmad, Mohd Anas, Way, Foong Lim, Fressengeas, Nicolas, Chevallier, Christyves
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48969/ http://eprints.usm.my/48969/1/MNRG_ZH09.pdf

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