Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode

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Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode

In this works, indium gallium nitride (InGaN) based light emitting diode (LED) was grown on a 4-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition. Three-step magnesium (Mg) doping profile was proposed to enhance the efficiency of the LED and the attention was pa...

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Bibliographic Details
Main Authors:	Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd, Ahmad, Mohd Anas, Sha, Shiong Ng, Hassan, Zainuriah
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48968/ http://eprints.usm.my/48968/1/MNRG_ZH08.pdf

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