Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT)
InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well whic...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2020
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48952/ http://eprints.usm.my/48952/1/MNRG_ZH02.pdf |
| _version_ | 1848881301254307840 |
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| author | Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Zainal, Norzaini Ng, Sha Shiong Hassan, Zainuriah |
| author_facet | Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Zainal, Norzaini Ng, Sha Shiong Hassan, Zainuriah |
| author_sort | Ahmad, Mohd Anas |
| building | USM Institutional Repository |
| collection | Online Access |
| description | InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well which is consistent with SIMS analysis. SIMS analysis was also performed to analyze the In distribution in the InGaN well layer, where the results were found to be nonuniform in the InGaN active layer, as opposed to the results obtained from APT measurement. Further from SIMS measurement, the upper interfaces of the QWs were slightly more diffused than the lower interfaces. Meanwhile, APT measurement showed In clustering or In rich regions based on different color distributions, indicating different In concentration. The results of APT and SIMS for average In mole fracrtion were validated by XRD measurement. |
| first_indexed | 2025-11-15T18:16:51Z |
| format | Conference or Workshop Item |
| id | usm-48952 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:51Z |
| publishDate | 2020 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-489522021-04-20T08:45:14Z http://eprints.usm.my/48952/ Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Zainal, Norzaini Ng, Sha Shiong Hassan, Zainuriah QC1-999 Physics InGaN/GaN multiquantum wells (MQWs) grown on 2-inch c-plane patterned sapphire substrate using metal-organic chemical vapor deposition was characterized by secondary ion mass spectrometry and atom probe tomography. The average In mole fraction by APT was found to be around 16% in the InGaN well which is consistent with SIMS analysis. SIMS analysis was also performed to analyze the In distribution in the InGaN well layer, where the results were found to be nonuniform in the InGaN active layer, as opposed to the results obtained from APT measurement. Further from SIMS measurement, the upper interfaces of the QWs were slightly more diffused than the lower interfaces. Meanwhile, APT measurement showed In clustering or In rich regions based on different color distributions, indicating different In concentration. The results of APT and SIMS for average In mole fracrtion were validated by XRD measurement. 2020-12-02 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48952/1/MNRG_ZH02.pdf Ahmad, Mohd Anas and Hamzah, Nur Atiqah and Asri, Rahil Izzati Mohd and Zainal, Norzaini and Ng, Sha Shiong and Hassan, Zainuriah (2020) Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT). In: 5th Meeting of Malaysia Nitrides Research Group (MNRG 2020). |
| spellingShingle | QC1-999 Physics Ahmad, Mohd Anas Hamzah, Nur Atiqah Asri, Rahil Izzati Mohd Zainal, Norzaini Ng, Sha Shiong Hassan, Zainuriah Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title | Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title_full | Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title_fullStr | Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title_full_unstemmed | Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title_short | Inhomogeneity Of An InGaN Based Blue Led Studied By Secondary Ion Mass Spectrometry (SIMS) And Atom Probe Tomography (APT) |
| title_sort | inhomogeneity of an ingan based blue led studied by secondary ion mass spectrometry (sims) and atom probe tomography (apt) |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48952/ http://eprints.usm.my/48952/1/MNRG_ZH02.pdf |