Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

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Effects Of V/III Ratio Of InGaN Quantum Well On The Properties Of Near Ultraviolet Light Emitting Diodes

In this work, indium gallium nitride (InGaN) based near ultraviolet light emitting diode (NUV-LED) has been grown on a 2-inch c-plane patterned sapphire substrate at atmospheric pressure using metal organic chemical vapor deposition (MOCVD). The attention was paid to the effects of the V/III ratio o...

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Bibliographic Details
Main Authors:	Sahar, Mohd Ann Amirul Zulffiqal Md, Hassan, Zainuriah, Sha, Shiong Ng, Way, Foong Lim, Khai, Sheen Lau, Alias, Ezzah A., Ahmad, Mohd Anas, Hamzah, Nur Atiqah, Asri, Rahil Izzati Mohd
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48948/ http://eprints.usm.my/48948/1/MNRG_ZH01.pdf

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