Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film

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Effects Of Post-Deposition Annealing In Oxygen Ambient Of Rf Magnetron Sputtered Ga2O3 Thin Film

In this work, the gallium oxide (Ga2O3) thin films were deposited on silicon substrate using radio frequency (RF) magnetron sputtering and these Ga2O3 thin films were subjected to post-deposition annealing in oxygen ambient at different temperatures of 400, 600, 800, and 1000℃ for 60 minutes. The st...

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Bibliographic Details
Main Authors:	Hedei, Puteri Haslinda Megat Abdul, Hassan, Zainuriah, Hock, Jin Quah
Format:	Conference or Workshop Item
Language:	English
Published:	2020
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48944/ http://eprints.usm.my/48944/1/MNRG_QHJ01.pdf

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