Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate

It is well-known that GaN-on-GaN LEDs have lower dislocation density compared to GaN-on-sapphire LEDs. Nonetheless, the overall efficiency of the GaN-on-GaN LEDs is still lower than the GaN-on-sapphire LEDs. The problem is associated to total internal reflection effect which is higher in the LEDs. T...

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Bibliographic Details
Main Authors: Alias, Ezzah A., Samsudin, Muhammad Esmed Alif, Denbaars, Steven P., Speck, James S., Nakamura, Shuji, Zainal, Norzaini
Format: Conference or Workshop Item
Language:English
Published: 2020
Subjects:
QC1-999 Physics
Online Access:http://eprints.usm.my/48942/
http://eprints.usm.my/48942/1/MNRG_NZ03.pdf

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