Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN

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Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN

Poor light extraction due to total internal reflection (TIR) phenomenon has become a major problem in InGaN/GaN light-emitting diode (LED) [1-2]. Surface texturing by photoelectrochemical (PEC) etching gives access to more than 70% improvement in light extraction as reported in [3]. In this work, an...

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Bibliographic Details
Main Authors:	Ibrahim, N., Ikram Md Taib, M., Waheeda, S. N., Alias, E. A., Zainal, N.
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48905/ http://eprints.usm.my/48905/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2099.pdf

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