UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation
Transition metal oxides semiconductors are well known multifunction compounds, some show an n-type behaviour such as zinc oxide, titanium oxide and the others behave as p-type semiconductors. In this study nickel oxide (NiO) thin films (as a p-type semiconductor) was prepared via two-step process, f...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48888/ http://eprints.usm.my/48888/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2032.pdf |
| _version_ | 1848881283697999872 |
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| author | Nomaan, Ahlaam T. Al-Hardan, Naif H. Ahmed, Naser M. Ng, Sha Shiong Aziz, Azlan Abdul |
| author_facet | Nomaan, Ahlaam T. Al-Hardan, Naif H. Ahmed, Naser M. Ng, Sha Shiong Aziz, Azlan Abdul |
| author_sort | Nomaan, Ahlaam T. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Transition metal oxides semiconductors are well known multifunction compounds, some show an n-type behaviour such as zinc oxide, titanium oxide and the others behave as p-type semiconductors. In this study nickel oxide (NiO) thin films (as a p-type semiconductor) was prepared via two-step process, first Ni metal is thermally evaporated on an n-type silicon substrate in high vacuum thermal evaporation unit, then thermal oxidation was employed to convert the Ni metal to NiO in a controllable tube furnace at atmospheric ambient. The prepared thin films were characterized through X-ray diffraction to verify its phase structures, ultraviolet–visible spectrophotometry to study its optical properties. The prepared p-n junction based on NiO thin films and the Si substrate was tested as UV-visible photodetector. The results show a blind sun light photodetector with high selectivity to UV light. The device performance as a UV photodetector will be explored. |
| first_indexed | 2025-11-15T18:16:34Z |
| format | Conference or Workshop Item |
| id | usm-48888 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:34Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488882021-04-14T03:45:55Z http://eprints.usm.my/48888/ UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation Nomaan, Ahlaam T. Al-Hardan, Naif H. Ahmed, Naser M. Ng, Sha Shiong Aziz, Azlan Abdul QC1-999 Physics Transition metal oxides semiconductors are well known multifunction compounds, some show an n-type behaviour such as zinc oxide, titanium oxide and the others behave as p-type semiconductors. In this study nickel oxide (NiO) thin films (as a p-type semiconductor) was prepared via two-step process, first Ni metal is thermally evaporated on an n-type silicon substrate in high vacuum thermal evaporation unit, then thermal oxidation was employed to convert the Ni metal to NiO in a controllable tube furnace at atmospheric ambient. The prepared thin films were characterized through X-ray diffraction to verify its phase structures, ultraviolet–visible spectrophotometry to study its optical properties. The prepared p-n junction based on NiO thin films and the Si substrate was tested as UV-visible photodetector. The results show a blind sun light photodetector with high selectivity to UV light. The device performance as a UV photodetector will be explored. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48888/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2032.pdf Nomaan, Ahlaam T. and Al-Hardan, Naif H. and Ahmed, Naser M. and Ng, Sha Shiong and Aziz, Azlan Abdul (2019) UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Nomaan, Ahlaam T. Al-Hardan, Naif H. Ahmed, Naser M. Ng, Sha Shiong Aziz, Azlan Abdul UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title | UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title_full | UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title_fullStr | UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title_full_unstemmed | UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title_short | UV Photodetector Based On P-N Junction Of Nickel Oxide Thin Films And N-Type Silicon Prepared By Thermal Oxidation |
| title_sort | uv photodetector based on p-n junction of nickel oxide thin films and n-type silicon prepared by thermal oxidation |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48888/ http://eprints.usm.my/48888/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2032.pdf |