Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate
The indium composition in InxGa1-xN/GaN multi-quantum well structure e(MQW) is crucial because lower indium composition will shift the wavelength towards ultraviolet region. Nevertheless, at certain indium content in MQW, it will out diffuse from the MQW resulting in the wavelength shift from green...
| Main Authors: | , , , , , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48887/ http://eprints.usm.my/48887/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2029.pdf |
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| author | Rais, Shamsul Amir Abdul Hassan, Zainuriah Bakar, Ahmad Shuhaimi Abu Yusuf, Yusnizam Taib, Muhamad Ikram Md Sulaiman, Abdullah Fadil Hussin, Hayatun Najihah Keiji, Nagai Ahmad, Mohd Fairus Yuka, Akimoto Dai, Shoji |
| author_facet | Rais, Shamsul Amir Abdul Hassan, Zainuriah Bakar, Ahmad Shuhaimi Abu Yusuf, Yusnizam Taib, Muhamad Ikram Md Sulaiman, Abdullah Fadil Hussin, Hayatun Najihah Keiji, Nagai Ahmad, Mohd Fairus Yuka, Akimoto Dai, Shoji |
| author_sort | Rais, Shamsul Amir Abdul |
| building | USM Institutional Repository |
| collection | Online Access |
| description | The indium composition in InxGa1-xN/GaN multi-quantum well structure e(MQW) is crucial because lower indium composition will shift the wavelength towards ultraviolet region. Nevertheless, at certain indium content in MQW, it will out diffuse from the MQW resulting in the wavelength shift from green to much shorter wavelength, after the annealing process for p-type activation. In this study, we had grown a full Light Emitting Diode device with the MQW layer at a relative high temperature for green LED with indium pre-flow at the top of n-type layer just beneath the MQW using Metal Organic Chemical Vapor Deposition (MOCVD). Transmission Electron Microscopy (TEM) image of the MQW prior and post the activation of p-type had been observed, which resulted in good contrast, showing the abruptness of the MQW layer of the device. Homogenous layers of InxGa1- xN/GaN has been observed. We also managed to reduce the wavelength shift of the device significantly. The optical, crystal properties of grown devices had been studied. |
| first_indexed | 2025-11-15T18:16:34Z |
| format | Conference or Workshop Item |
| id | usm-48887 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:34Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488872021-04-14T03:38:58Z http://eprints.usm.my/48887/ Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate Rais, Shamsul Amir Abdul Hassan, Zainuriah Bakar, Ahmad Shuhaimi Abu Yusuf, Yusnizam Taib, Muhamad Ikram Md Sulaiman, Abdullah Fadil Hussin, Hayatun Najihah Keiji, Nagai Ahmad, Mohd Fairus Yuka, Akimoto Dai, Shoji QC1-999 Physics The indium composition in InxGa1-xN/GaN multi-quantum well structure e(MQW) is crucial because lower indium composition will shift the wavelength towards ultraviolet region. Nevertheless, at certain indium content in MQW, it will out diffuse from the MQW resulting in the wavelength shift from green to much shorter wavelength, after the annealing process for p-type activation. In this study, we had grown a full Light Emitting Diode device with the MQW layer at a relative high temperature for green LED with indium pre-flow at the top of n-type layer just beneath the MQW using Metal Organic Chemical Vapor Deposition (MOCVD). Transmission Electron Microscopy (TEM) image of the MQW prior and post the activation of p-type had been observed, which resulted in good contrast, showing the abruptness of the MQW layer of the device. Homogenous layers of InxGa1- xN/GaN has been observed. We also managed to reduce the wavelength shift of the device significantly. The optical, crystal properties of grown devices had been studied. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48887/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2029.pdf Rais, Shamsul Amir Abdul and Hassan, Zainuriah and Bakar, Ahmad Shuhaimi Abu and Yusuf, Yusnizam and Taib, Muhamad Ikram Md and Sulaiman, Abdullah Fadil and Hussin, Hayatun Najihah and Keiji, Nagai and Ahmad, Mohd Fairus and Yuka, Akimoto and Dai, Shoji (2019) Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Rais, Shamsul Amir Abdul Hassan, Zainuriah Bakar, Ahmad Shuhaimi Abu Yusuf, Yusnizam Taib, Muhamad Ikram Md Sulaiman, Abdullah Fadil Hussin, Hayatun Najihah Keiji, Nagai Ahmad, Mohd Fairus Yuka, Akimoto Dai, Shoji Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title | Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title_full | Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title_fullStr | Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title_full_unstemmed | Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title_short | Fabrication Of Deep Green Light Emitting Diode On Bulk Gallium Nitride Substrate |
| title_sort | fabrication of deep green light emitting diode on bulk gallium nitride substrate |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48887/ http://eprints.usm.my/48887/1/ICoSeMT%202019%20ABSTRACT%20BOOK%2029.pdf |