Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN
In this work, we report the fabrication of a near-ultraviolet (UV) light emitting (LED) device based on the growth of n-ZnO nanorod (NRs) arrays on the p-GaN layer/sapphire substrate heterostructure using the low-cost hydrothermal technique. Morphological, structural and optical properties of the as...
| Main Authors: | , , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48873/ http://eprints.usm.my/48873/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20150.pdf |
| _version_ | 1848881280342556672 |
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| author | Mohammad, Sabah M. Abd-Alghafour, Nabeel M. Hassan, Zainuriah Ahmed, Naser M. Ali, Amal Mohamed Ahmed Abdalrheem, Raed Abdullah, Mundzir |
| author_facet | Mohammad, Sabah M. Abd-Alghafour, Nabeel M. Hassan, Zainuriah Ahmed, Naser M. Ali, Amal Mohamed Ahmed Abdalrheem, Raed Abdullah, Mundzir |
| author_sort | Mohammad, Sabah M. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, we report the fabrication of a near-ultraviolet (UV) light emitting (LED) device based on the growth of n-ZnO nanorod (NRs) arrays on the p-GaN layer/sapphire substrate heterostructure using the low-cost hydrothermal technique. Morphological, structural and optical properties of the as-fabricated sample are described. The room temperature current-voltage (I–V) measurements of the fabricated LED device confirmed a rectifying diode behaviour. The device presents near UV color under reverse bias. The luminescence properties of were investigated from both sides of the fabricated LED device at room temperature by electroluminescence (EL). EL spectrum of color emitting LED composed of intense peaks centered at 369 nm, 394 nm and a broad band around green emission. EL emission for the device has seen with the naked eye under normal light. |
| first_indexed | 2025-11-15T18:16:31Z |
| format | Conference or Workshop Item |
| id | usm-48873 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:31Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488732021-04-13T06:59:22Z http://eprints.usm.my/48873/ Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN Mohammad, Sabah M. Abd-Alghafour, Nabeel M. Hassan, Zainuriah Ahmed, Naser M. Ali, Amal Mohamed Ahmed Abdalrheem, Raed Abdullah, Mundzir QC1-999 Physics In this work, we report the fabrication of a near-ultraviolet (UV) light emitting (LED) device based on the growth of n-ZnO nanorod (NRs) arrays on the p-GaN layer/sapphire substrate heterostructure using the low-cost hydrothermal technique. Morphological, structural and optical properties of the as-fabricated sample are described. The room temperature current-voltage (I–V) measurements of the fabricated LED device confirmed a rectifying diode behaviour. The device presents near UV color under reverse bias. The luminescence properties of were investigated from both sides of the fabricated LED device at room temperature by electroluminescence (EL). EL spectrum of color emitting LED composed of intense peaks centered at 369 nm, 394 nm and a broad band around green emission. EL emission for the device has seen with the naked eye under normal light. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48873/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20150.pdf Mohammad, Sabah M. and Abd-Alghafour, Nabeel M. and Hassan, Zainuriah and Ahmed, Naser M. and Ali, Amal Mohamed Ahmed and Abdalrheem, Raed and Abdullah, Mundzir (2019) Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Mohammad, Sabah M. Abd-Alghafour, Nabeel M. Hassan, Zainuriah Ahmed, Naser M. Ali, Amal Mohamed Ahmed Abdalrheem, Raed Abdullah, Mundzir Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title | Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title_full | Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title_fullStr | Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title_full_unstemmed | Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title_short | Fabrication And Characterization Of Light Emitting Diode Based On N-Zno Nanorods Grown Via A Low-Temperature Method On P-GaN |
| title_sort | fabrication and characterization of light emitting diode based on n-zno nanorods grown via a low-temperature method on p-gan |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48873/ http://eprints.usm.my/48873/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20150.pdf |