Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec

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Enhancing Performance Of Porous Si-Doped GaN Based Msm Photodetector Using 50 Hz Acpec

In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...

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Bibliographic Details
Main Authors:	Mahmood, Ainorkhilah, Hassan, Zainuriah, Rahim, Alhan Farhanah Abd, Radzali, Rosfariza, Ooi, Mahayatun Dayana Johan, Ahmed, Naser M.
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48870/ http://eprints.usm.my/48870/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20146.pdf

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