Characteristics Of InGaN Based Red Led Epiwafer

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Characteristics Of InGaN Based Red Led Epiwafer

This paper describes a preliminary work of developing InGaN based red LED using two-flow MOCVD reactor, focussing on characteristics of the LED epiwafer from the aspects of optics, surface and crystalline structure. The active region multiquantum wells (MQWs) of the LED consists of In0.3Ga0.7N quant...

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Bibliographic Details
Main Authors:	Zainal, N., Alhassan, Abdullah I., Nakamura, S., Denbaars, S. P., Speck, J. S.
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48868/ http://eprints.usm.my/48868/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20145.pdf

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