Efficiency Droop Of InGaN/GaN Led With Different Indium Composition

III-nitride light emitting diodes (LEDs) have attracted considerable attraction due to their various applications in displays and illumination lighting. Nevertheless, the majority of InGaN/GaN LEDs suffer from the efficiency droop. This droop would limit the potential of the LEDs in high current app...

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Main Authors: Samsudin, M. E. A., Alias, E. A., Iza, M., Speck, J. S., Denbaars, S. P., Nakamura, S., Zainal, N.
Format: Conference or Workshop Item
Language:English
Published: 2019
Subjects:
Online Access:http://eprints.usm.my/48863/
http://eprints.usm.my/48863/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20139.pdf
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author Samsudin, M. E. A.
Alias, E. A.
Iza, M.
Speck, J. S.
Denbaars, S. P.
Nakamura, S.
Zainal, N.
author_facet Samsudin, M. E. A.
Alias, E. A.
Iza, M.
Speck, J. S.
Denbaars, S. P.
Nakamura, S.
Zainal, N.
author_sort Samsudin, M. E. A.
building USM Institutional Repository
collection Online Access
description III-nitride light emitting diodes (LEDs) have attracted considerable attraction due to their various applications in displays and illumination lighting. Nevertheless, the majority of InGaN/GaN LEDs suffer from the efficiency droop. This droop would limit the potential of the LEDs in high current applications. As widely reported, high indium content in InGaN/GaN multiquantum well active region of the LED promotes indium fluctuation that degrades the efficiency of the LED. In this work, we will present results of the efficiency droop for InGaN/GaN LED with indium content of 18% and 8%, respectively. The efficiency droop of the LED with 18% of indium shows higher efficiency droop than the LED with 8% of indium content.
first_indexed 2025-11-15T18:16:27Z
format Conference or Workshop Item
id usm-48863
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:16:27Z
publishDate 2019
recordtype eprints
repository_type Digital Repository
spelling usm-488632021-04-13T03:53:51Z http://eprints.usm.my/48863/ Efficiency Droop Of InGaN/GaN Led With Different Indium Composition Samsudin, M. E. A. Alias, E. A. Iza, M. Speck, J. S. Denbaars, S. P. Nakamura, S. Zainal, N. QC1-999 Physics III-nitride light emitting diodes (LEDs) have attracted considerable attraction due to their various applications in displays and illumination lighting. Nevertheless, the majority of InGaN/GaN LEDs suffer from the efficiency droop. This droop would limit the potential of the LEDs in high current applications. As widely reported, high indium content in InGaN/GaN multiquantum well active region of the LED promotes indium fluctuation that degrades the efficiency of the LED. In this work, we will present results of the efficiency droop for InGaN/GaN LED with indium content of 18% and 8%, respectively. The efficiency droop of the LED with 18% of indium shows higher efficiency droop than the LED with 8% of indium content. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48863/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20139.pdf Samsudin, M. E. A. and Alias, E. A. and Iza, M. and Speck, J. S. and Denbaars, S. P. and Nakamura, S. and Zainal, N. (2019) Efficiency Droop Of InGaN/GaN Led With Different Indium Composition. In: International Conference On Semiconductor Materials Technology.
spellingShingle QC1-999 Physics
Samsudin, M. E. A.
Alias, E. A.
Iza, M.
Speck, J. S.
Denbaars, S. P.
Nakamura, S.
Zainal, N.
Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title_full Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title_fullStr Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title_full_unstemmed Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title_short Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
title_sort efficiency droop of ingan/gan led with different indium composition
topic QC1-999 Physics
url http://eprints.usm.my/48863/
http://eprints.usm.my/48863/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20139.pdf