High-K LaCeO For Passivation Of Si Substrate

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High-K LaCeO For Passivation Of Si Substrate

High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As th...

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Bibliographic Details
Main Authors:	Way, Foong Lim, Kuan, Yew Cheong, Zainovia, Lockman, Zainuriah, Hassan, Hock, Jin Quah
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48846/ http://eprints.usm.my/48846/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20115.pdf

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