High-K LaCeO For Passivation Of Si Substrate
High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As th...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Online Access: | http://eprints.usm.my/48846/ http://eprints.usm.my/48846/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20115.pdf |
| _version_ | 1848881272336678912 |
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| author | Way, Foong Lim Kuan, Yew Cheong Zainovia, Lockman Zainuriah, Hassan Hock, Jin Quah |
| author_facet | Way, Foong Lim Kuan, Yew Cheong Zainovia, Lockman Zainuriah, Hassan Hock, Jin Quah |
| author_sort | Way, Foong Lim |
| building | USM Institutional Repository |
| collection | Online Access |
| description | High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As the annealing time was increased from 15 to 45 min, a shift in the diffraction angles, peak intensity, and peak width obtained from high resolution X-ray diffraction happened and resulted in changes in term of crystallite size and lattice strain present in the films. Corresponding influence on the film roughness has been also explored. A functional metal-oxide-semiconductor (MOS) based capacitor using the LaCeO film was fabricated in order to study current-voltage characteristics of the sample |
| first_indexed | 2025-11-15T18:16:23Z |
| format | Conference or Workshop Item |
| id | usm-48846 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:23Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488462021-04-12T08:44:33Z http://eprints.usm.my/48846/ High-K LaCeO For Passivation Of Si Substrate Way, Foong Lim Kuan, Yew Cheong Zainovia, Lockman Zainuriah, Hassan Hock, Jin Quah QC1-999 Physics High dielectric constant rare earth lanthanum cerium oxide (LaCeO) films have been studied as the passivation layers for silicon substrate. Effects of post-deposition annealing time (15, 30, and 45 min) was carried out at 700ºC towards structural and morphological characteristics of the films. As the annealing time was increased from 15 to 45 min, a shift in the diffraction angles, peak intensity, and peak width obtained from high resolution X-ray diffraction happened and resulted in changes in term of crystallite size and lattice strain present in the films. Corresponding influence on the film roughness has been also explored. A functional metal-oxide-semiconductor (MOS) based capacitor using the LaCeO film was fabricated in order to study current-voltage characteristics of the sample 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48846/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20115.pdf Way, Foong Lim and Kuan, Yew Cheong and Zainovia, Lockman and Zainuriah, Hassan and Hock, Jin Quah (2019) High-K LaCeO For Passivation Of Si Substrate. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Way, Foong Lim Kuan, Yew Cheong Zainovia, Lockman Zainuriah, Hassan Hock, Jin Quah High-K LaCeO For Passivation Of Si Substrate |
| title | High-K LaCeO For Passivation Of Si Substrate |
| title_full | High-K LaCeO For Passivation Of Si Substrate |
| title_fullStr | High-K LaCeO For Passivation Of Si Substrate |
| title_full_unstemmed | High-K LaCeO For Passivation Of Si Substrate |
| title_short | High-K LaCeO For Passivation Of Si Substrate |
| title_sort | high-k laceo for passivation of si substrate |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48846/ http://eprints.usm.my/48846/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20115.pdf |