Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate

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Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate

The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented i...

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Bibliographic Details
Main Authors:	Hock, Jin Quah, Kuan, Yew Cheong, Hassan, Zainuriah, Way, Foong Lim
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48845/ http://eprints.usm.my/48845/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20113.pdf

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