Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate
The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented i...
| Main Authors: | , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2019
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48845/ http://eprints.usm.my/48845/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20113.pdf |
| _version_ | 1848881272035737600 |
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| author | Hock, Jin Quah Kuan, Yew Cheong Hassan, Zainuriah Way, Foong Lim |
| author_facet | Hock, Jin Quah Kuan, Yew Cheong Hassan, Zainuriah Way, Foong Lim |
| author_sort | Hock, Jin Quah |
| building | USM Institutional Repository |
| collection | Online Access |
| description | The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples. Atomic force microscopy was utilized to acquire 2-dimensional surface topograpy of Y2O3 films subjected to different PDA time. An increment in rootmean-square roughness was perceived as PDA time was prolonged. In addition, currentvoltage and capacitance-voltage characteristics of the investigated Al/Y2O3/Si-based metaloxide-semiconductor capacitors were also presented in this work. |
| first_indexed | 2025-11-15T18:16:23Z |
| format | Conference or Workshop Item |
| id | usm-48845 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:23Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488452021-04-12T08:27:01Z http://eprints.usm.my/48845/ Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate Hock, Jin Quah Kuan, Yew Cheong Hassan, Zainuriah Way, Foong Lim QC1-999 Physics The effects of post-deposition annealing (PDA) time (15, 30, and 45 min) at 800˚C in forming gas (95% N2-5% H2) ambient was systematically studied for RF-magnetron sputtered Y2O3 films on n-type Si(100) substrate. X-ray diffraction characterization has revealed the detection of Y2O3 phase oriented in (400), (440), (541), and (543) planes for all of the investigated samples. Atomic force microscopy was utilized to acquire 2-dimensional surface topograpy of Y2O3 films subjected to different PDA time. An increment in rootmean-square roughness was perceived as PDA time was prolonged. In addition, currentvoltage and capacitance-voltage characteristics of the investigated Al/Y2O3/Si-based metaloxide-semiconductor capacitors were also presented in this work. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48845/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20113.pdf Hock, Jin Quah and Kuan, Yew Cheong and Hassan, Zainuriah and Way, Foong Lim (2019) Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Hock, Jin Quah Kuan, Yew Cheong Hassan, Zainuriah Way, Foong Lim Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title | Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title_full | Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title_fullStr | Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title_full_unstemmed | Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title_short | Effects Of Post-Deposition Annealing Time In Forming Gas Ambient On Y2O3 Films Deposited On Silicon Substrate |
| title_sort | effects of post-deposition annealing time in forming gas ambient on y2o3 films deposited on silicon substrate |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48845/ http://eprints.usm.my/48845/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20113.pdf |