Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss

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Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss

In this study, the role of nucleation layer temperature on the ud-GaN crystal quality grown on cone-patterned sapphire substrate (PSS) by metalorganic chemical vapor deposition (MOCVD) was explored. To do this, the crystal qualities of bulk GaN were characterized by rocking curves of (002) and (102)...

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Bibliographic Details
Main Authors:	Ahmad, M. A., Hamzah, N. A., Asri1, R. I. M., Zainal, N., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2019
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48841/ http://eprints.usm.my/48841/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20102.pdf

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