Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films
- In the present study, sol-gel dip coating method was used to synthesize gallium nitride (GaN) thin films. Gallium nitratre hydrate (Ga(NO3)3.xH2O) powder, ethanol and diethanolamine (DEA) were used as starting material, solvent, and surfactant, respectively. Different amounts of DEA, i.e., 0 ml, 0...
| Main Authors: | , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2019
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| Online Access: | http://eprints.usm.my/48840/ http://eprints.usm.my/48840/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20100.pdf |
| _version_ | 1848881270603382784 |
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| author | Hamid, Maizatul Akmam Ab Ng, Sha Shiong |
| author_facet | Hamid, Maizatul Akmam Ab Ng, Sha Shiong |
| author_sort | Hamid, Maizatul Akmam Ab |
| building | USM Institutional Repository |
| collection | Online Access |
| description | - In the present study, sol-gel dip coating method was used to synthesize gallium nitride (GaN) thin films. Gallium nitratre hydrate (Ga(NO3)3.xH2O) powder, ethanol and diethanolamine (DEA) were used as starting material, solvent, and surfactant, respectively. Different amounts of DEA, i.e., 0 ml, 0.10 ml, 0.25 ml, 0.50 ml, 0.75 ml and 1.0 ml, were added into the precursor. The effects of different amounts of DEA on GaN thin films on structural and optical properties of the deposited films were investigated. High resolution X-ray diffraction results revealed that hexagonal wurtzite structure GaN thin film with (002) preferred orientation was sythesized. The intensity of the GaN(002) diffraction peaks increases with the increase of amount of surfactant from 0 ml to 0.75 ml and degraded at 1.0 ml. Raman signal of E2 (high) GaN peaks increases and becomes stronger at 0.75 ml. Further increase in the amount of surfactant has caused the intensity of E2 (high) GaN peak decreases. The measured results shows that the amount of surfactant plays an important role in improving crystallinity of GaN thin films. |
| first_indexed | 2025-11-15T18:16:21Z |
| format | Conference or Workshop Item |
| id | usm-48840 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:21Z |
| publishDate | 2019 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488402021-04-12T05:48:09Z http://eprints.usm.my/48840/ Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films Hamid, Maizatul Akmam Ab Ng, Sha Shiong QC1-999 Physics - In the present study, sol-gel dip coating method was used to synthesize gallium nitride (GaN) thin films. Gallium nitratre hydrate (Ga(NO3)3.xH2O) powder, ethanol and diethanolamine (DEA) were used as starting material, solvent, and surfactant, respectively. Different amounts of DEA, i.e., 0 ml, 0.10 ml, 0.25 ml, 0.50 ml, 0.75 ml and 1.0 ml, were added into the precursor. The effects of different amounts of DEA on GaN thin films on structural and optical properties of the deposited films were investigated. High resolution X-ray diffraction results revealed that hexagonal wurtzite structure GaN thin film with (002) preferred orientation was sythesized. The intensity of the GaN(002) diffraction peaks increases with the increase of amount of surfactant from 0 ml to 0.75 ml and degraded at 1.0 ml. Raman signal of E2 (high) GaN peaks increases and becomes stronger at 0.75 ml. Further increase in the amount of surfactant has caused the intensity of E2 (high) GaN peak decreases. The measured results shows that the amount of surfactant plays an important role in improving crystallinity of GaN thin films. 2019-04-30 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48840/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20100.pdf Hamid, Maizatul Akmam Ab and Ng, Sha Shiong (2019) Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films. In: International Conference On Semiconductor Materials Technology. |
| spellingShingle | QC1-999 Physics Hamid, Maizatul Akmam Ab Ng, Sha Shiong Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title | Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title_full | Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title_fullStr | Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title_full_unstemmed | Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title_short | Effects Of Different Amounts Of Surfactant On Characteristics Of Sol-Gel Dip Coated Gallium Nitride Thin Films |
| title_sort | effects of different amounts of surfactant on characteristics of sol-gel dip coated gallium nitride thin films |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48840/ http://eprints.usm.my/48840/1/ICoSeMT%202019%20ABSTRACT%20BOOK%20100.pdf |