Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique
In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH)...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2017
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48832/ http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf |
| _version_ | 1848881268353138688 |
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| author | Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ahmed, Naser M. |
| author_facet | Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ahmed, Naser M. |
| author_sort | Mahmood, Ainorkhilah |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH) used in common de constant current electrochemical etching process. Ultra-violet (UV) illumination is used to assist in the generation of electron-hole pairs, where etching proceeds through the oxidation and consequently, dissolution of the semiconductor surface. The ac formed porous Si-doped GaN with excellent structural and optical properties. According to the FESEM micrographs, the GaN thin films exhibit a homogeneous nanoporous structures with spatial nano-flakes arrangement. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. Electrical characterizations of the MSM photodiodes were carried out by using current-voltage (1-V) measurements indicated that the devices were highly sensitive to ambient light. |
| first_indexed | 2025-11-15T18:16:19Z |
| format | Conference or Workshop Item |
| id | usm-48832 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:19Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488322021-04-12T02:41:32Z http://eprints.usm.my/48832/ Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ahmed, Naser M. QC1-999 Physics In this work, we report the formation of porous Si-doped GaN films under a novel alternating current (sine-wave a.c. (50 Hz)) photo-assisted electrochemical etching (ACPEC) conditions. The formation of porous Si-doped GaN by the novel ACPEC is performed in the same electrolyte concentration (4% KOH) used in common de constant current electrochemical etching process. Ultra-violet (UV) illumination is used to assist in the generation of electron-hole pairs, where etching proceeds through the oxidation and consequently, dissolution of the semiconductor surface. The ac formed porous Si-doped GaN with excellent structural and optical properties. According to the FESEM micrographs, the GaN thin films exhibit a homogeneous nanoporous structures with spatial nano-flakes arrangement. The porous layer exhibited a substantial photoluminescence (PL) intensity enhancement with red-shifted band-edge PL peaks associated with the relaxation of compressive stress. The shift of E2(high) to the lower frequency in Raman spectra of the porous GaN films further confirms such a stress relaxation. Electrical characterizations of the MSM photodiodes were carried out by using current-voltage (1-V) measurements indicated that the devices were highly sensitive to ambient light. 2017-11-16 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf Mahmood, Ainorkhilah and Hassan, Zainuriah and Rahim, Alhan Farhanah Abd and Radzali, Rosfariza and Ahmed, Naser M. (2017) Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique. In: 6th International Conference on Solid State Science and Technology (ICSSST) 2017 & Workshop and Advanced Materials Technology : Growth and characterization. |
| spellingShingle | QC1-999 Physics Mahmood, Ainorkhilah Hassan, Zainuriah Rahim, Alhan Farhanah Abd Radzali, Rosfariza Ahmed, Naser M. Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title | Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title_full | Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title_fullStr | Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title_full_unstemmed | Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title_short | Enhancing Performance of Porous Si-Doped GaN based MSM Photodetector Using AC Technique |
| title_sort | enhancing performance of porous si-doped gan based msm photodetector using ac technique |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48832/ http://eprints.usm.my/48832/1/ZH17_OP07.pdf%20done.pdf |