Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique
Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface...
| Main Authors: | , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2017
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| Online Access: | http://eprints.usm.my/48823/ http://eprints.usm.my/48823/1/ZH17_OP02_1.pdf%20done.pdf |
| _version_ | 1848881265405591552 |
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| author | Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Foong Quah, Hock Jin |
| author_facet | Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Foong Quah, Hock Jin |
| author_sort | Sohimee, Siti Nurfarhana |
| building | USM Institutional Repository |
| collection | Online Access |
| description | Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with ratio (5:20) for 30 minutes under different UV lamp intensity; 40%, 50% and 60%. The samples were characterized by using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD). |
| first_indexed | 2025-11-15T18:16:16Z |
| format | Conference or Workshop Item |
| id | usm-48823 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:16Z |
| publishDate | 2017 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488232021-04-09T02:47:20Z http://eprints.usm.my/48823/ Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Foong Quah, Hock Jin QC1-999 Physics Alternating current photo-assisted electrochemical etching (ACPEC) process was used to produce the formation of porous silicon with different ultra-violet(UV) light intensity. The study aims to investigate the effect of different UV light illumination on the properties of porous silicon. The surface of n-type silicon (111) was selectively etched in the HF and ethanol solution with ratio (5:20) for 30 minutes under different UV lamp intensity; 40%, 50% and 60%. The samples were characterized by using field emission scanning electron microscope (FESEM), atomic force microscopy (AFM) and high resolution X-ray diffraction (HR-XRD). 2017 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48823/1/ZH17_OP02_1.pdf%20done.pdf Sohimee, Siti Nurfarhana and Hassan, Zainuriah and Ahmed, Naser Mahmoud and Lim, Way Foong and Quah, Hock Jin (2017) Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique. In: The International Conference of Solid State Science and Technology (ICSSST ), 13–16 November 2017, Penang, Malaysia. https://iopscience.iop.org/article/10.1088/1742-6596/1083/1/012034/pdf |
| spellingShingle | QC1-999 Physics Sohimee, Siti Nurfarhana Hassan, Zainuriah Ahmed, Naser Mahmoud Lim, Way Foong Quah, Hock Jin Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title | Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title_full | Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title_fullStr | Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title_full_unstemmed | Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title_short | Effect of Different UV Light Intensity on Porous Silicon Fabricated by Using Alternating Current photo-assisted Electrochemical Etching (ACPEC) Technique |
| title_sort | effect of different uv light intensity on porous silicon fabricated by using alternating current photo-assisted electrochemical etching (acpec) technique |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48823/ http://eprints.usm.my/48823/ http://eprints.usm.my/48823/1/ZH17_OP02_1.pdf%20done.pdf |