Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

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Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition

In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...

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Bibliographic Details
Main Authors:	Rais, Shamsul Amir Abdul, Najiha, Hayatun, Hassan, Zainuriah, Shuhaimi, Ahmad
Format:	Conference or Workshop Item
Language:	English
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48819/ http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf

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