Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition
In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micr...
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| Online Access: | http://eprints.usm.my/48819/ http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf |
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| author | Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad |
| author_facet | Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad |
| author_sort | Rais, Shamsul Amir Abdul |
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| description | In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet
region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution
x-ray diffraction spectroscopy, and photoluminescence spectroscopy. |
| first_indexed | 2025-11-15T18:16:15Z |
| format | Conference or Workshop Item |
| id | usm-48819 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:15Z |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-488192021-04-09T01:35:57Z http://eprints.usm.my/48819/ Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad QC1-999 Physics In an effort to successfully fabricate lnGaN-based for green emitting devices on patterned sapphire substrate, the indium composition in lnxGa1-xN/GaN multi-quantum well structure is crucial because lower indium composition will shift the wavelength towards ultraviolet region. In this study, 4 micrometre of undoped GaN epilayer was deposited as a buffer layer prior to the growth structure. In order to complete the device, 6 pairs of lnGaN/GaN multiquantum well structure was sandwiched with a 500 nm of p-GaN layer and 300 nm of nGaN layer by metal organic chemical vapour deposition (MOCVD). In this research, the indium to gallium composition ratio was 4:1. The crystal and optical properties of the samples were characterized using field effect scanning electron microscopy, high resolution x-ray diffraction spectroscopy, and photoluminescence spectroscopy. Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf Rais, Shamsul Amir Abdul and Najiha, Hayatun and Hassan, Zainuriah and Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition. In: 6th International Conference on Solid State Science (ICSSST) 2017 & Technology and Workshop on Advanced Materials Technology: Growth & Characterization. |
| spellingShingle | QC1-999 Physics Rais, Shamsul Amir Abdul Najiha, Hayatun Hassan, Zainuriah Shuhaimi, Ahmad Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title_full | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title_fullStr | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title_full_unstemmed | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title_short | Fabrication of lnxGa1-xN/GaN Multi-Quantum Well Structure for Green Light Emitting Diode on Patterned Sapphire Substrate by Metal Organic Chemical Vapour Deposition |
| title_sort | fabrication of lnxga1-xn/gan multi-quantum well structure for green light emitting diode on patterned sapphire substrate by metal organic chemical vapour deposition |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48819/ http://eprints.usm.my/48819/1/ZH17_OP010.pdf%20done.pdf |