Effect of structural design on lnGaN based green LEOs with AIGaN cap layer

QR Code

Effect of structural design on lnGaN based green LEOs with AIGaN cap layer

The efficiency of the green light emitting diodes (LEOs) is reported to degrade significantly due to high dislocations density and quantum-confinement Stark effect (OCSE), which results in droop efficiency at higher current. To address this issue, this work proposes the introduction of lnGaN layer b...

Full description

Bibliographic Details
Main Authors:	Taib, M. l. Md, Alhassan, A. I., Muhammed, M. M., Ajia, I. A., Zainal, N.
Format:	Conference or Workshop Item
Language:	English
Published:	2017
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48818/ http://eprints.usm.my/48818/1/NZ17_OP02.pdf%20done.pdf

Similar Items

Effects of Post Annealing Treatment on the Characteristics of Ohmic Contacts on n-type AIGaN
by: Hassan, Z., et al.
Published: (2005)

Effects of Ammonia Flow Rate on the Synthesis of AIGaN Thin Films prepared via Spin Coating Approach
by: lsa, Nurul Atikah Mohd, et al.
Published: (2016)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M., et al.
Published: (2020)

Influence Of Growth Temperature Of PGaN Layer On The Characteristics Of InGaN/GaN Blue Light Emitting Diodes
by: Asri, R. I. M, et al.
Published: (2020)

Surface And Interface Phonon Polaritons Characteristics In InAIGaN Quaternary Alloys
by: Aljameel, , Abdulaziz Ibraheem A
Published: (2016)

Effect Of GaN Nucleation Layer Temperature On Structural And Morphological Properties Of Ud-GaN Template Grown On Pss
by: Ahmad, M. A., et al.
Published: (2019)

Computational study of LnGaO3 (Ln=La+Gd) perovskites
by: Gale, Julian, et al.
Published: (2005)

Optimization of AlN/GaN strained-layer superlattice for GaN epitaxy on Si(111) substrate / Yusnizam Yusuf
by: Yusnizam, Yusuf
Published: (2017)

Enhancement Of Efficiency Of GaN-On-GaN Led By Wet Etching Roughening On N-Face GaN Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Characterization of AlInN layer grown on GaN/Sapphire substrate by MOCVD
by: Wei-Ching Huang,, et al.
Published: (2013)

Efficiency Droop Of InGaN/GaN Led With Different Indium Composition
by: Samsudin, M. E. A., et al.
Published: (2019)

Characterization of p-GaN1−xAsx/n-GaN PN junction diodes
by: Qian, H., et al.
Published: (2016)

Characteristics Of InGaN Based Red Led Epiwafer
by: Zainal, N., et al.
Published: (2019)

Biocompatibility of semiconducting AlGaN/GaN material with living cells
by: Podolska, Anna, et al.
Published: (2012)

TEM studies of multilayer ohmic contacts to n-type AlGaN/GaN
by: Fay, Mike W., et al.
Published: (2003)

Picosecond acoustics in single quantum wells of cubic GaN/(Al,Ga)N
by: Czerniuk, T., et al.
Published: (2017)

Properties of p-GaN Layer on Different Nitride Surfaces
by: Fatihah, N., et al.
Published: (2015)

Electrode-Less Photo-Assisted Etching Of P-Type And N-Type GaN
by: Ibrahim, N., et al.
Published: (2019)

Enhancement Of Efficiency Of GaN-on-GaN LED By Wet Etching Roughening On N-Face Gan Substrate
by: Alias, Ezzah A., et al.
Published: (2020)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

Effects Of Three-Step Magnesium Doping In p-GaN Layer On The Properties Of InGaN Based Light Emitting Diode
by: Hamzah, Nur Atiqah, et al.
Published: (2020)

TEM assessment of As-doped GaN epitaxial layers grown on sapphire
by: Fay, Mike W., et al.
Published: (2004)

Characterisation of temperature dependent parameters of multi-quantum well (MQW) Ti/Au/n-AlGaAs/n-GaAs/n-AlGaAs Schottky diodes
by: Filali, Walid, et al.
Published: (2017)

Influence Of Molarity And Time Of Potassium Hydroxide Etching On Al-Rich AlGaN Layer
by: Yusuf, Yusnizam, et al.
Published: (2020)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Effect Of Nucleation Time On GaN Layer Grown On Different Shape Of Patterned Sapphire Substrate
by: Taib, Muhamad Ikram Md, et al.
Published: (2020)

Ion versus pH sensitivity of ungated AlGaN/GaN heterostructure-based devices
by: Podolska, Anna, et al.
Published: (2010)

Scanning Ion Probe Studies of Silicon Implantation Profiles in AlGaN/GaN HEMT Heterostructures
by: Kocan, M., et al.
Published: (2008)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N.M., et al.
Published: (2020)

Synchrotron-based XPS studies of AlGaN and GaN surface chemistry and its relationship to ion sensor behaviour
by: Khir, F.L.M., et al.
Published: (2014)

AlGaN/GaN-based biosensor for label-free detection of biological activity
by: Podolska, Anna, et al.
Published: (2013)

Thin Film Undoped And P-Doped GaN As Sensor
by: Nashaain, N. M., et al.
Published: (2020)

Growth of n-ZnOnanorods on p-GaN using an Aqueous Solution Method
by: Mohammad, Sabah M., et al.
Published: (2015)

Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure
by: Waheeda, S. N., et al.
Published: (2015)

Nitrate ion detection using AlGaN/GaN heterostructure-based devices without a reference electrode
by: Myers, M, et al.
Published: (2013)

Growth of GaN-based LED on C-plane GaN substrate / Sivanathan Pariasamy @ Chelladurai
by: Sivanathan , Pariasamy @ Chelladurai
Published: (2018)

The sensing performance of undoped-AlGaN/GaN/sapphire HEMT hydrogen gas sensor
by: Mohamad, Mazuina, et al.
Published: (2008)

Occurrence of the green aIga Trentepohlia on the trunk and branches of durian
by: Lim, Tong Kwee, et al.
Published: (1989)

EBIC study of Au / n-type GaN Schottky contacts
by: Moldovan, Grigore, et al.
Published: (2003)

Effects Of Thermal Annealing Of Pt Schottky Contacts On n-GaN.
by: C, W Chin, et al.
Published: (2007)