Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device

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Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device

Polycrystalline GaN has the potential in photodetector application for a wide range of ultraviolet (UV) light. Nonetheless, devices based on this material have not received much attention as compared to its single crystal counterpart. Therefore, this work describes one of the pioneering works on MSM...

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Bibliographic Details
Main Authors:	Ariff, A., Hassan, Z., Zainal, N.
Format:	Conference or Workshop Item
Language:	English
Published:	2017
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48817/ http://eprints.usm.my/48817/1/NZ17_OP01.pdf%20done.pdf

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