Ariff, A., Hassan, Z., & Zainal, N. (2017). Potential of polycrystalline GaN deposited by electron beam evaporator for metal-semiconductor-metal {MSM) photodetector device.
Chicago Style (17th ed.) CitationAriff, A., Z. Hassan, and N. Zainal. Potential of Polycrystalline GaN Deposited by Electron Beam Evaporator for Metal-semiconductor-metal {MSM) Photodetector Device. 2017.
MLA (9th ed.) CitationAriff, A., et al. Potential of Polycrystalline GaN Deposited by Electron Beam Evaporator for Metal-semiconductor-metal {MSM) Photodetector Device. 2017.
Warning: These citations may not always be 100% accurate.