Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode

The heterostructure of the n-ZnO nanorod (NRs) arrays grown on the p-GaN layer was formed using lowcost hydrothermal technique in order to fabricate a light emitting diode (LED) device. Morphological, structural and optica l properties of as-prepared sample are described. The LED exhibited room temp...

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Main Authors: Mohammad, Sabah M., Hassan, Z., Ahmed, Naser M.
Format: Conference or Workshop Item
Language:English
Published: 2016
Subjects:
Online Access:http://eprints.usm.my/48796/
http://eprints.usm.my/48796/1/ZO4.pdf%20done.pdf
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author Mohammad, Sabah M.
Hassan, Z.
Ahmed, Naser M.
author_facet Mohammad, Sabah M.
Hassan, Z.
Ahmed, Naser M.
author_sort Mohammad, Sabah M.
building USM Institutional Repository
collection Online Access
description The heterostructure of the n-ZnO nanorod (NRs) arrays grown on the p-GaN layer was formed using lowcost hydrothermal technique in order to fabricate a light emitting diode (LED) device. Morphological, structural and optica l properties of as-prepared sample are described. The LED exhibited room temperature current-voltage (1-V) characteristics confirming a rectifying diode behaviour. The device presents near ultra-violet (UV) color under reverse bias. The electroluminescence (EL) spectrum of color emitting LED composed of intense peaks centered at 378 nm and 367 nm. The electroluminescence mechanism of the heterojunction LED was discussed in terms of band diagram.
first_indexed 2025-11-15T18:16:09Z
format Conference or Workshop Item
id usm-48796
institution Universiti Sains Malaysia
institution_category Local University
language English
last_indexed 2025-11-15T18:16:09Z
publishDate 2016
recordtype eprints
repository_type Digital Repository
spelling usm-487962021-04-07T08:12:28Z http://eprints.usm.my/48796/ Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode Mohammad, Sabah M. Hassan, Z. Ahmed, Naser M. QC1-999 Physics The heterostructure of the n-ZnO nanorod (NRs) arrays grown on the p-GaN layer was formed using lowcost hydrothermal technique in order to fabricate a light emitting diode (LED) device. Morphological, structural and optica l properties of as-prepared sample are described. The LED exhibited room temperature current-voltage (1-V) characteristics confirming a rectifying diode behaviour. The device presents near ultra-violet (UV) color under reverse bias. The electroluminescence (EL) spectrum of color emitting LED composed of intense peaks centered at 378 nm and 367 nm. The electroluminescence mechanism of the heterojunction LED was discussed in terms of band diagram. 2016-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48796/1/ZO4.pdf%20done.pdf Mohammad, Sabah M. and Hassan, Z. and Ahmed, Naser M. (2016) Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016).
spellingShingle QC1-999 Physics
Mohammad, Sabah M.
Hassan, Z.
Ahmed, Naser M.
Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title_full Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title_fullStr Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title_full_unstemmed Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title_short Near Ultra-Violet Electroluminescence from a ZnO Nanorods/p-GaN Heterojunction Light Emitting Diode
title_sort near ultra-violet electroluminescence from a zno nanorods/p-gan heterojunction light emitting diode
topic QC1-999 Physics
url http://eprints.usm.my/48796/
http://eprints.usm.my/48796/1/ZO4.pdf%20done.pdf