Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method
In this study, doped indium nitride (InN:Mg) thin films grown on silicon ( Ill) substrate are prepared via so l-gel spin coating method followed by nitridation process. The degree of nitrid at ion of ln 20 3 to InN was very sensitive to the nitridat ion temperature. A custo-made tube furnace was u...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2016
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| Online Access: | http://eprints.usm.my/48776/ http://eprints.usm.my/48776/1/NG2.pdf%20done.pdf |
| _version_ | 1848881251255058432 |
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| author | Hui, San Lee Sha, Shiong Ng Fong, Kwong Yam |
| author_facet | Hui, San Lee Sha, Shiong Ng Fong, Kwong Yam |
| author_sort | Hui, San Lee |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this study, doped indium nitride (InN:Mg) thin films grown on silicon ( Ill) substrate are prepared via so l-gel
spin coating method followed by nitridation process. The degree of nitrid at ion of ln 20 3 to InN was very sensitive
to the nitridat ion temperature. A custo-made tube furnace was used to do nitridation process which can resolve
the low dissociation temperature issue of lnN:Mg. In this research, attention was focused on the influences of
nitridation temperatures on the structural of the synthesized lnN:Mg thin films. The films were nitridated at range
580-620 °C for 45 min and the growth of lnN:Mg thin films were investigated. X-ray diffraction (XRD) results
revealed that the deposited lnN:Mg thin film at 600°C has InN( I 00), lnN(002) and InN( I 0 I) preferred orientation.
Field emission scanning electron microscopy (FESEM) showed th e surface of the films exhibited densely packed
grains. Lastly, the elemental composition the deposited thin films was analysed by using energy dispersive Xrays
spectroscopy (EDX). The detected atomic percentages at nitridation temperature 600°C revealed the lowest
oxygen percentage with almost ratio. indium to nitrogen. Moreover. the atom ic percentage of oxygen
increases with increasing nitridation temperatue. Finally, all the results revealed that 600°C of nitridation temperature was the most efficient temperature for the nitridation process. All the measurements were performed
at room temperature. |
| first_indexed | 2025-11-15T18:16:03Z |
| format | Conference or Workshop Item |
| id | usm-48776 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:03Z |
| publishDate | 2016 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-487762021-04-02T08:14:14Z http://eprints.usm.my/48776/ Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method Hui, San Lee Sha, Shiong Ng Fong, Kwong Yam QC1-999 Physics In this study, doped indium nitride (InN:Mg) thin films grown on silicon ( Ill) substrate are prepared via so l-gel spin coating method followed by nitridation process. The degree of nitrid at ion of ln 20 3 to InN was very sensitive to the nitridat ion temperature. A custo-made tube furnace was used to do nitridation process which can resolve the low dissociation temperature issue of lnN:Mg. In this research, attention was focused on the influences of nitridation temperatures on the structural of the synthesized lnN:Mg thin films. The films were nitridated at range 580-620 °C for 45 min and the growth of lnN:Mg thin films were investigated. X-ray diffraction (XRD) results revealed that the deposited lnN:Mg thin film at 600°C has InN( I 00), lnN(002) and InN( I 0 I) preferred orientation. Field emission scanning electron microscopy (FESEM) showed th e surface of the films exhibited densely packed grains. Lastly, the elemental composition the deposited thin films was analysed by using energy dispersive Xrays spectroscopy (EDX). The detected atomic percentages at nitridation temperature 600°C revealed the lowest oxygen percentage with almost ratio. indium to nitrogen. Moreover. the atom ic percentage of oxygen increases with increasing nitridation temperatue. Finally, all the results revealed that 600°C of nitridation temperature was the most efficient temperature for the nitridation process. All the measurements were performed at room temperature. 2016-12-07 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48776/1/NG2.pdf%20done.pdf Hui, San Lee and Sha, Shiong Ng and Fong, Kwong Yam (2016) Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method. In: 3rd Meeting of Malaysia Nitrides Research Group (MNRG 2016). |
| spellingShingle | QC1-999 Physics Hui, San Lee Sha, Shiong Ng Fong, Kwong Yam Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title | Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title_full | Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title_fullStr | Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title_full_unstemmed | Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title_short | Influences of Thermal stability of Doped Indium Nitride Thin Films at Elevated Temperatures by Sol-Gel spin Coating Method |
| title_sort | influences of thermal stability of doped indium nitride thin films at elevated temperatures by sol-gel spin coating method |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48776/ http://eprints.usm.my/48776/1/NG2.pdf%20done.pdf |