Effects of Withdrawal Speed on the Synthesis of GaN Thin Films by Dip Coating Method

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Effects of Withdrawal Speed on the Synthesis of GaN Thin Films by Dip Coating Method

ln this research, hexagonal wurtzite structure gallium nitride (GaN) thin films were grown on aluminium nitride on silicon substrate [AIN/Si( I I I)] substrate by using sol-gel dip coating deposition method. The effects of the withdrawal speed on the strucutural and surface morphology of the synthes...

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Bibliographic Details
Main Authors:	Hamid, Maizatul Akmam Ab, Sha, Shiong Ng
Format:	Conference or Workshop Item
Language:	English
Published:	2016
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48775/ http://eprints.usm.my/48775/1/NG1.pdf%20done.pdf

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