Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator

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Optimization of Post-Annealing Treatment Conditions on GaN Layer Grown on m-Plane Sapphire Substrate by Electron Beam Evaporator

This paper describes the effect of using different conditions of post-annealing treatment on properties of GaN layer grown on m-plane sapphire by electron beam (e-beam) evaporator. Prior to the annealing, the surface of the grown GaN was found to be smooth with some agglomerations of its grains i...

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Bibliographic Details
Main Authors:	Ariff, A., Zainal,, N., Hassan,, Z., Ibrahim, K.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48772/ http://eprints.usm.my/48772/1/Section%20C%20164.pdf%20cut.pdf

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