Optical Investigations on In0.11Ga0.89N based LEDs Grown on Si (111) Substrate with Different Superlattices Stack Layer Structure
Growing lnxGa1-xN based LEOs on Si is considered challenging as the large lattice mismatch between nitrides and Si material would lead to cracks and defects in the nitride layers. This reduces the luminescence efficiency of the devices. Therefore, in this work, we investigate the effect of the in...
| Main Authors: | , , , , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48771/ http://eprints.usm.my/48771/1/Section%20C%20163.pdf%20cut.pdf |
| Summary: | Growing lnxGa1-xN based LEOs on Si is considered challenging as the large lattice mismatch between
nitrides and Si material would lead to cracks and defects in the nitride layers. This reduces the
luminescence efficiency of the devices. Therefore, in this work, we investigate the effect of the
inserting different intermediate structure as an effort to reduce the defects from propagating into the
multi-quantum wells (MQWs). Here, In0.11Ga0.89N based LEOs grown on Si (111) substrate with
AIN/GaN SLS. In between the LEOs and the SLS, intermediate layers were grown in different structure
and in different devices. The idea is to further minimize the impact of the defects propagation of
defects and cracks into the MOWs region. We found the lno_,,Gao.asN based LEDs with the insertion of
AIGaN/GaN SLS exhibits the best internal quantum efficiency than other devices. |
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