Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator
In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evapora...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2015
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| Online Access: | http://eprints.usm.my/48769/ http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf |
| _version_ | 1848881249518616576 |
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| author | Fikri, Z. M. Zainal,, N. Ibrahim, K. |
| author_facet | Fikri, Z. M. Zainal,, N. Ibrahim, K. |
| author_sort | Fikri, Z. M. |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on
aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular
beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam
evaporator growth, the GaN layer was annealed at a temperature of 950 oc in ammonia (NH3)
ambient as an attempt to improve the crystalline properties of the GaN layer. From x-ray diffraction
(XRD) measurement, the diffractions of GaN were observed at -33° and -34° in all annealed samples,
showing few directions of growth had been promoted. On the other hand, field emission scanning
electron microscopy (FESEM) measurement, the surface morphology is better for the GaN grown on
AIN with the template structure due to improved grains coalescence and larger grains size. As
comparison, the GaN layer also was grown on AlxGa1-xN. Interestingly, the GaN layer is further
improved with the use of the surface, as measured by XRD and FESEM measurements. |
| first_indexed | 2025-11-15T18:16:01Z |
| format | Conference or Workshop Item |
| id | usm-48769 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:01Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-487692021-04-02T02:25:30Z http://eprints.usm.my/48769/ Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator Fikri, Z. M. Zainal,, N. Ibrahim, K. QC1-999 Physics In this work, we have successfully grown a GaN layer by electron beam (e-beam) evaporator on aluminium nitride (AIN) layers using sapphire substrate. The AIN layers were prepared by molecular beam epitaxy (MBE) 1) directly on sapphire and 2) on GaN/sapphire MOCVD template. After the ebeam evaporator growth, the GaN layer was annealed at a temperature of 950 oc in ammonia (NH3) ambient as an attempt to improve the crystalline properties of the GaN layer. From x-ray diffraction (XRD) measurement, the diffractions of GaN were observed at -33° and -34° in all annealed samples, showing few directions of growth had been promoted. On the other hand, field emission scanning electron microscopy (FESEM) measurement, the surface morphology is better for the GaN grown on AIN with the template structure due to improved grains coalescence and larger grains size. As comparison, the GaN layer also was grown on AlxGa1-xN. Interestingly, the GaN layer is further improved with the use of the surface, as measured by XRD and FESEM measurements. 2015-06-09 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf Fikri, Z. M. and Zainal,, N. and Ibrahim, K. (2015) Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |
| spellingShingle | QC1-999 Physics Fikri, Z. M. Zainal,, N. Ibrahim, K. Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title | Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title_full | Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title_fullStr | Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title_full_unstemmed | Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title_short | Growth of Gallium Nitride (GaN) on Aluminium Nitride Surfaces Grown by Electron-Beam Evaporator |
| title_sort | growth of gallium nitride (gan) on aluminium nitride surfaces grown by electron-beam evaporator |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48769/ http://eprints.usm.my/48769/1/Section%20C%20162.pdf%20cut.pdf |