Role of NH3 Annealing Treatment in Improving SeN Layer on GaAs Substrate Using Electron Beam Evaporator
In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ) ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology of the SeN...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
| Published: |
2015
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| Subjects: | |
| Online Access: | http://eprints.usm.my/48767/ http://eprints.usm.my/48767/1/Section%20C%20161-2.pdf%20cut.pdf |
| Summary: | In this work, the growth of scandium nitride (SeN) on gallium arsenide (GaAs) substrate is
demonstrated using electron beam (e-beam) evaporator with successive annealing in ammonia (NHJ)
ambient. As observed in field effect scanning electron microscopy (FE-SEM), the surface morphology
of the SeN layer was started to transform from rice grains-like structure to rock salt grains-like
structure by increasing the temperature from 750 oc to 900 °C. The rock salt grains-like structure is
similar to high quality SeN, as reported in literature. However, the surface degraded with the presence
of voids at 980 °C. The existence of SeN bond was confirmed by x-ray photospectroscopy (XPS)
measurement. The photoluminescence (PL) of near-to-band-edge SeN peak was observed in all
samples. Furthermore, the SeN peaks in Raman spectrum were obvious when the sample was
annealed above 850 °C. Based on the evidences, the growth of SeN using the above techniques was
successful, with the annealing temperature above 850 °C. |
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