Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator

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Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator

In recent years, gallium nitride (GaN) films have been widely grown by molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD). However, both are expensive techniques and require high maintenance and operation. Therefore, a more simple and cost-effective technique like ele...

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Bibliographic Details
Main Authors:	Taib, M. lkram Md, Zainal, N., Hassan, Z.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48765/ http://eprints.usm.my/48765/1/Section%20C%20161.pdf%20cut.pdf

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