Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator
In recent years, gallium nitride (GaN) films have been widely grown by molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD). However, both are expensive techniques and require high maintenance and operation. Therefore, a more simple and cost-effective technique like ele...
| Main Authors: | , , |
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| Format: | Conference or Workshop Item |
| Language: | English |
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2015
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| Online Access: | http://eprints.usm.my/48765/ http://eprints.usm.my/48765/1/Section%20C%20161.pdf%20cut.pdf |
| _version_ | 1848881248373571584 |
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| author | Taib, M. lkram Md Zainal, N. Hassan, Z. |
| author_facet | Taib, M. lkram Md Zainal, N. Hassan, Z. |
| author_sort | Taib, M. lkram Md |
| building | USM Institutional Repository |
| collection | Online Access |
| description | In recent years, gallium nitride (GaN) films have been widely grown by molecular beam epitaxy (MBE)
and metal organic chemical vapour deposition (MOCVD). However, both are expensive techniques and require high maintenance and operation. Therefore, a more simple and cost-effective technique like electron beam (e-beam) evaporator should be more explored for growing GaN layer. So far, only few groups have work on this technique.
In this work, we aim at demonstrating growth of GaN films on gallium arsenide (GaAs) substrate by ebeam evaporator. Our initial observation found that the GaN films lack the N atom component. Thus, the samples were annealed in ammonia (NHJ) ambient, and the annealing temperature was varied at 650 oc, 700 oc, 800 oc, 850 °C, 900 °C, 950 °C and 980 °C. The effects of using different annealing
temperature on the properties of the GaN films were investigated through field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy. Towards the end, the optimum annealing
temperature that promoted significant improvement to the GaN films is proposed. |
| first_indexed | 2025-11-15T18:16:00Z |
| format | Conference or Workshop Item |
| id | usm-48765 |
| institution | Universiti Sains Malaysia |
| institution_category | Local University |
| language | English |
| last_indexed | 2025-11-15T18:16:00Z |
| publishDate | 2015 |
| recordtype | eprints |
| repository_type | Digital Repository |
| spelling | usm-487652021-04-02T01:25:33Z http://eprints.usm.my/48765/ Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator Taib, M. lkram Md Zainal, N. Hassan, Z. QC1-999 Physics In recent years, gallium nitride (GaN) films have been widely grown by molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD). However, both are expensive techniques and require high maintenance and operation. Therefore, a more simple and cost-effective technique like electron beam (e-beam) evaporator should be more explored for growing GaN layer. So far, only few groups have work on this technique. In this work, we aim at demonstrating growth of GaN films on gallium arsenide (GaAs) substrate by ebeam evaporator. Our initial observation found that the GaN films lack the N atom component. Thus, the samples were annealed in ammonia (NHJ) ambient, and the annealing temperature was varied at 650 oc, 700 oc, 800 oc, 850 °C, 900 °C, 950 °C and 980 °C. The effects of using different annealing temperature on the properties of the GaN films were investigated through field emission scanning electron microscopy (FE-SEM), atomic force microscopy (AFM). X-ray diffraction (XRD), photoluminescence (PL) and Raman spectroscopy. Towards the end, the optimum annealing temperature that promoted significant improvement to the GaN films is proposed. 2015-06-09 Conference or Workshop Item PeerReviewed application/pdf en http://eprints.usm.my/48765/1/Section%20C%20161.pdf%20cut.pdf Taib, M. lkram Md and Zainal, N. and Hassan, Z. (2015) Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator. In: 2nd Meeting of Malaysia Nitrides Research Group (MNRG 2015). |
| spellingShingle | QC1-999 Physics Taib, M. lkram Md Zainal, N. Hassan, Z. Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title | Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title_full | Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title_fullStr | Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title_full_unstemmed | Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title_short | Optimization of Post-Annealing NH3 Temperature for GaN Growth on GaAs (100) Substrate via Electron Beam Evaporator |
| title_sort | optimization of post-annealing nh3 temperature for gan growth on gaas (100) substrate via electron beam evaporator |
| topic | QC1-999 Physics |
| url | http://eprints.usm.my/48765/ http://eprints.usm.my/48765/1/Section%20C%20161.pdf%20cut.pdf |