Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure

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Properties of Strain in GaN Layer Grown on Si (100) Substrate and Its Porous Structure

We report an investigation of strain effects in GaN layer grown on a Si (100) substrate. From temperature dependent PL measurements, it was found that the strain may influence the value of the binding energy of donors and acceptors in the GaN layer. Estimation based on Raman spectroscopy measurem...

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Bibliographic Details
Main Authors:	Waheeda, S. N., Zainal, N., Hassan, Z., Powell, R. E. L., Akimov, A. V., Kent, A. J.
Format:	Conference or Workshop Item
Language:	English
Published:	2015
Subjects:	QC1-999 Physics
Online Access:	http://eprints.usm.my/48740/ http://eprints.usm.my/48740/1/Section%20C%20160.pdf%20cut.pdf

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